TY - JOUR
T1 - Identifying Electronic Transitions of Defects in Hexagonal Boron Nitride for Quantum Memories
AU - Cholsuk, Chanaprom
AU - Çakan, Aslı
AU - Suwanna, Sujin
AU - Vogl, Tobias
N1 - Publisher Copyright:
© 2024 The Authors. Advanced Optical Materials published by Wiley-VCH GmbH.
PY - 2024/5/6
Y1 - 2024/5/6
N2 - A quantum memory is a crucial keystone for enabling large-scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems are developed thus far, none of them can perfectly meet all requirements. This work herein proposes a quantum memory based on color centers in hexagonal boron nitride (hBN), where its performance is evaluated based on a simple theoretical model of suitable defects in a cavity. Employing density functional theory calculations, 257 triplet and 211 singlet spin electronic transitions are investigated. Among these defects, it is found that some defects inherit the Λ electronic structures desirable for a Raman-type quantum memory and optical transitions can couple with other quantum systems. Further, the required quality factor and bandwidth are examined for each defect to achieve a 95% writing efficiency. Both parameters are influenced by the radiative transition rate in the defect state. In addition, inheriting triplet-singlet spin multiplicity indicates the possibility of being a quantum sensing, in particular, optically detected magnetic resonance. This work therefore demonstrates the potential usage of hBN defects as a quantum memory in future quantum networks.
AB - A quantum memory is a crucial keystone for enabling large-scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems are developed thus far, none of them can perfectly meet all requirements. This work herein proposes a quantum memory based on color centers in hexagonal boron nitride (hBN), where its performance is evaluated based on a simple theoretical model of suitable defects in a cavity. Employing density functional theory calculations, 257 triplet and 211 singlet spin electronic transitions are investigated. Among these defects, it is found that some defects inherit the Λ electronic structures desirable for a Raman-type quantum memory and optical transitions can couple with other quantum systems. Further, the required quality factor and bandwidth are examined for each defect to achieve a 95% writing efficiency. Both parameters are influenced by the radiative transition rate in the defect state. In addition, inheriting triplet-singlet spin multiplicity indicates the possibility of being a quantum sensing, in particular, optically detected magnetic resonance. This work therefore demonstrates the potential usage of hBN defects as a quantum memory in future quantum networks.
KW - density functional theory
KW - fluorescent defects
KW - hexagonal boron nitride
KW - quantum memory
KW - quantum technology applications
UR - http://www.scopus.com/inward/record.url?scp=85182687728&partnerID=8YFLogxK
U2 - 10.1002/adom.202302760
DO - 10.1002/adom.202302760
M3 - Article
AN - SCOPUS:85182687728
SN - 2195-1071
VL - 12
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 13
M1 - 2302760
ER -