TY - JOUR
T1 - Polarization Dynamics of Solid-State Quantum Emitters
AU - Kumar, Anand
AU - Samaner, Çağlar
AU - Cholsuk, Chanaprom
AU - Matthes, Tjorben
AU - Paçal, Serkan
AU - Oyun, Yağız
AU - Zand, Ashkan
AU - Chapman, Robert J.
AU - Saerens, Grégoire
AU - Grange, Rachel
AU - Suwanna, Sujin
AU - Ateş, Serkan
AU - Vogl, Tobias
N1 - Publisher Copyright:
© 2024 The Authors. Published by American Chemical Society.
PY - 2023
Y1 - 2023
N2 - Quantum emitters in solid-state crystals have recently attracted a great deal of attention due to their simple applicability in optical quantum technologies. The polarization of single photons generated by quantum emitters is one of the key parameters that plays a crucial role in various applications, such as quantum computation, which uses the indistinguishability of photons. However, the degree of single-photon polarization is typically quantified using the time-averaged photoluminescence intensity of single emitters, which provides limited information about the dipole properties in solids. In this work, we use single defects in hexagonal boron nitride and nanodiamond as efficient room-temperature single-photon sources to reveal the origin and temporal evolution of the dipole orientation in solid-state quantum emitters. The angles of the excitation and emission dipoles relative to the crystal axes were determined experimentally and then calculated using density functional theory, which resulted in characteristic angles for every specific defect that can be used as an efficient tool for defect identification and understanding their atomic structure. Moreover, the temporal polarization dynamics revealed a strongly modified linear polarization visibility that depends on the excited-state decay time of the individual excitation. This effect can potentially be traced back to the excitation of excess charges in the local crystal environment. Understanding such hidden time-dependent mechanisms can further improve the performance of polarization-sensitive experiments, particularly that for quantum communication with single-photon emitters.
AB - Quantum emitters in solid-state crystals have recently attracted a great deal of attention due to their simple applicability in optical quantum technologies. The polarization of single photons generated by quantum emitters is one of the key parameters that plays a crucial role in various applications, such as quantum computation, which uses the indistinguishability of photons. However, the degree of single-photon polarization is typically quantified using the time-averaged photoluminescence intensity of single emitters, which provides limited information about the dipole properties in solids. In this work, we use single defects in hexagonal boron nitride and nanodiamond as efficient room-temperature single-photon sources to reveal the origin and temporal evolution of the dipole orientation in solid-state quantum emitters. The angles of the excitation and emission dipoles relative to the crystal axes were determined experimentally and then calculated using density functional theory, which resulted in characteristic angles for every specific defect that can be used as an efficient tool for defect identification and understanding their atomic structure. Moreover, the temporal polarization dynamics revealed a strongly modified linear polarization visibility that depends on the excited-state decay time of the individual excitation. This effect can potentially be traced back to the excitation of excess charges in the local crystal environment. Understanding such hidden time-dependent mechanisms can further improve the performance of polarization-sensitive experiments, particularly that for quantum communication with single-photon emitters.
KW - defect identification
KW - density functional theory
KW - electron irradiation
KW - hexagonal boron nitride
KW - nanodiamond NV centers
KW - quantum emitters array
KW - temporal polarization dynamics
UR - http://www.scopus.com/inward/record.url?scp=85185276913&partnerID=8YFLogxK
U2 - 10.1021/acsnano.3c08940
DO - 10.1021/acsnano.3c08940
M3 - Article
AN - SCOPUS:85185276913
SN - 1936-0851
JO - ACS Nano
JF - ACS Nano
ER -